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irfr3504ztrpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252
irfr3504ztrpbf Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IRFR3504ZTRPBF
Enrgtech Part No:
ET21626937
Warranty:
Manufacturer
$ 0.59 $ 0.59
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
8 x 8 x 4mm
Maximum Drain Source Voltage Vds:
40V
Series:
HEXFET
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
9mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
45nC
Maximum Power Dissipation Pd:
90W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
2.39 mm
Standards/Approvals:
No
Height:
330µF
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007726284.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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