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ipl60r360p6satma1 Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK
ipl60r360p6satma1 Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 30 A, 650 V Enhancement, 5-Pin ThinPAK

Manufacturer:
Infineon
Manufacturer Part No:
IPL60R360P6SATMA1
Enrgtech Part No:
ET21626910
Warranty:
Manufacturer
$ 0.73 $ 0.73
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
650V
Package Type:
ThinPAK
Series:
CoolMOS P6
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
360mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
22nC
Minimum Operating Temperature:
-40°C
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
89.3W
Maximum Operating Temperature:
150°C
Length:
5.1mm
Standards/Approvals:
No
Height:
1.1mm
Width:
6.1 mm
Automotive Standard:
No
pdf icon
A700000007726264.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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