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ipg20n10s4l35aatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON
ipg20n10s4l35aatma1 Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON

Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode, 20 A, 100 V Enhancement, 8-Pin TDSON

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N10S4L35AATMA1
Enrgtech Part No:
ET21626905
Warranty:
Manufacturer
$ 0.46 $ 0.46
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Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TDSON
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
35mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
13.4nC
Maximum Gate Source Voltage Vgs:
±16 V
Maximum Power Dissipation Pd:
43W
Forward Voltage Vf:
1V
Transistor Configuration:
Dual
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS Compliant
Width:
5.9 mm
Length:
5.15mm
Height:
1mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726516.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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