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auirfp4110 Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247
auirfp4110 Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247

Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247

Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247

Manufacturer:
Infineon
Manufacturer Part No:
AUIRFP4110
Enrgtech Part No:
ET21626869
Warranty:
Manufacturer
$ 4.30 $ 4.30
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
45mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
370W
Typical Gate Charge Qg @ Vgs:
150nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
5.31mm
Standards/Approvals:
No
Length:
15.87mm
Width:
20.7 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007725586.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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