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auirf2804strl Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263
auirf2804strl Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
AUIRF2804STRL
Enrgtech Part No:
ET21626868
Warranty:
Manufacturer
$ 2.82 $ 2.82
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Product Type:
MOSFET & Diode
Channel Type:
Type N
Maximum Continuous Drain Current Id:
270A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
160nC
Maximum Power Dissipation Pd:
300W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Height:
4.83mm
Standards/Approvals:
No
Width:
9.65 mm
Length:
10.67mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726460.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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