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auirf5210strl Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL
auirf5210strl Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin TO-263 AUIRF5210STRL

Manufacturer:
Infineon
Manufacturer Part No:
AUIRF5210STRL
Enrgtech Part No:
ET21617566
Warranty:
Manufacturer
$ 7.47 $ 7.47
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
38A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.6V
Typical Gate Charge Qg @ Vgs:
150nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
3.1W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
4.83mm
Width:
9.65 mm
Standards/Approvals:
No
Length:
10.67mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007584355.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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