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ipd60r360p7sauma1 Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252
ipd60r360p7sauma1 Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

Infineon IPD Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD60R360P7SAUMA1
Enrgtech Part No:
ET21614635
Warranty:
Manufacturer
$ 0.39 $ 0.39
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
600V
Series:
IPD
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
360mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
41W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
9.4nC
Minimum Operating Temperature:
-40°C
Maximum Operating Temperature:
150°C
Length:
6.73mm
Width:
6.22 mm
Standards/Approvals:
No
Height:
2.41mm
Automotive Standard:
No
pdf icon
A700000007497902.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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