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ipb80n04s2h4atma2 Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263
ipb80n04s2h4atma2 Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263

Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263

Infineon CoolMOS Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263

Manufacturer:
Infineon
Manufacturer Part No:
IPB80N04S2H4ATMA2
Enrgtech Part No:
ET21614629
Warranty:
Manufacturer
$ 1.43 $ 1.43
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
40V
Series:
CoolMOS
Package Type:
TO-263
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
66200113722, 66200313722, 662100124015, 662162120030, 662362320030
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
129W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
F93
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
10.31mm
Width:
4.5 x 3.2 x 1.02mm
Height:
4.57mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007498046.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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