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ips80r900p7akma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251
ips80r900p7akma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251

Manufacturer:
Infineon
Manufacturer Part No:
IPS80R900P7AKMA1
Enrgtech Part No:
ET21606567
Warranty:
Manufacturer
$ 0.89 $ 0.89
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
800V
Series:
CoolMOS P7
Package Type:
TO-251
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
900mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
45W
Typical Gate Charge Qg @ Vgs:
15nC
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
2.35 mm
Standards/Approvals:
No
Height:
330µF
Length:
6.7mm
Automotive Standard:
No
pdf icon
A700000007726211.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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