Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251

Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251

Manufacturer:
Manufacturer Part No:
IPS65R1K0CEAKMA2
Enrgtech Part No:
ET21606566
Warranty:
Manufacturer
$ 0.32 $ 0.32
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7.2A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-251
Series:
CoolMOS CE
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Minimum Operating Temperature:
-40°C
Maximum Power Dissipation Pd:
37W
Typical Gate Charge Qg @ Vgs:
15.3nC
Maximum Operating Temperature:
150°C
Length:
6.73mm
Height:
330µF
Width:
2.4 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007726115.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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