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ipi80n06s4l07aksa2 Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262
ipi80n06s4l07aksa2 Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262

Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262

Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-262

Manufacturer:
Infineon
Manufacturer Part No:
IPI80N06S4L07AKSA2
Enrgtech Part No:
ET21606550
Warranty:
Manufacturer
$ 0.82 $ 0.82
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS-T2
Package Type:
TO-262
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
6.7mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
79W
Typical Gate Charge Qg @ Vgs:
20 pcs
Maximum Gate Source Voltage Vgs:
16 V
Maximum Operating Temperature:
175°C
Height:
23.45mm
Length:
10.2mm
Standards/Approvals:
No
Width:
4.4 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726227.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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