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ipg20n06s4l11aatma1 Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
ipg20n06s4l11aatma1 Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Manufacturer:
Infineon
Manufacturer Part No:
IPG20N06S4L11AATMA1
Enrgtech Part No:
ET21606548
Warranty:
Manufacturer
$ 0.60 $ 0.60
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
60V
Series:
OptiMOS-T2
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
11.2mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
41nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
±16 V
Maximum Power Dissipation Pd:
65W
Maximum Operating Temperature:
175°C
Transistor Configuration:
Dual N Channel Logic Level Enhancement Mode
Length:
5.15mm
Height:
1mm
Width:
5.9 mm
Standards/Approvals:
RoHS, MSL1, AEC Q101
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726603.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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