Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON

Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON

Manufacturer:
Manufacturer Part No:
IPG20N04S4L08AATMA1
Enrgtech Part No:
ET21606547
Warranty:
Manufacturer
$ 0.45 $ 0.45
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
40V
Series:
OptiMOS-T2
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
8.2mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
39nC
Maximum Gate Source Voltage Vgs:
±16 V
Maximum Power Dissipation Pd:
54W
Minimum Operating Temperature:
-55°C
Transistor Configuration:
Enhancement Mode
Maximum Operating Temperature:
175°C
Length:
5.15mm
Width:
5.9 mm
Height:
1mm
Standards/Approvals:
RoHS Compliant
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726655.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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