Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON

Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON

Manufacturer:
Manufacturer Part No:
IPG16N10S461AATMA1
Enrgtech Part No:
ET21606546
Warranty:
Manufacturer
$ 0.43 $ 0.43
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Channel Type:
Type N
Product Type:
1 x 1 x 0.38mm
Maximum Continuous Drain Current Id:
16A
Maximum Drain Source Voltage Vds:
100V
Series:
OptiMOS-T2
Package Type:
TDSON
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
61mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
29W
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
5.4nC
Maximum Operating Temperature:
175°C
Transistor Configuration:
Dual
Length:
5.15mm
Standards/Approvals:
RoHS
Width:
5.9 mm
Height:
1mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
A700000007726123.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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