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ipd80r3k3p7atma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252
ipd80r3k3p7atma1 Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252

Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252

Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R3K3P7ATMA1
Enrgtech Part No:
ET21606543
Warranty:
Manufacturer
$ 0.25 $ 0.25
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.9A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-252
Series:
CoolMOS P7
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.3Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
18W
Forward Voltage Vf:
0.9V
Typical Gate Charge Qg @ Vgs:
5.8nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
2.41mm
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007726643.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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