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ipd50r650ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252
ipd50r650ceauma1 Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252

Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252

Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 500 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD50R650CEAUMA1
Enrgtech Part No:
ET21606538
Warranty:
Manufacturer
$ 0.30 $ 0.30
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
9A
Maximum Drain Source Voltage Vds:
500V
Series:
CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
650mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
47W
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
15nC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.84V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.73mm
Height:
2.41mm
Automotive Standard:
No
pdf icon
A700000007726306.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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