Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2

Manufacturer:
Manufacturer Part No:
IPD30N06S223ATMA2
Enrgtech Part No:
ET21606536
Warranty:
Manufacturer
$ 0.98 $ 0.98
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
55V
Series:
OptiMOS
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
TO-236AB
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
100W
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Operating Temperature:
175°C
Height:
2.3mm
Standards/Approvals:
No
Length:
6.5mm
Width:
6.22 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726428.pdf(datasheets)
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