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ipd15n06s2l64atma2 Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252
ipd15n06s2l64atma2 Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252

Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252

Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD15N06S2L64ATMA2
Enrgtech Part No:
ET21606535
Warranty:
Manufacturer
$ 0.30 $ 0.30
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
55V
Series:
OptiMOS
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
64mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
11nC
Maximum Power Dissipation Pd:
47W
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.5mm
Height:
2.3mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726159.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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