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ipd082n10n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252
ipd082n10n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
IPD082N10N3GATMA1
Enrgtech Part No:
ET21606532
Warranty:
Manufacturer
$ 0.77 $ 0.77
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-252
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
8.2mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
42nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
125W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
2.41mm
Standards/Approvals:
No
Width:
6.22 mm
Length:
6.73mm
Automotive Standard:
No
pdf icon
A700000007726647.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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