Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2

For more information please check the datasheets.

Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2

Manufacturer:

Infineon

Manufacturer Part No:

IPB80N06S2L09ATMA2

Enrgtech Part No:

ET21606531

Warranty:

Manufacturer

$ 2.95

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

80A

Maximum Drain Source Voltage Vds:

55V

Package Type:

TO-263

Series:

OptiMOS

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

8.2mΩ

Channel Mode:

Enhancement

Standards/Approvals:

Automotive Standard:

A700000007726400.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon OptiMOS Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2

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