Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263

Manufacturer:
Manufacturer Part No:
AUIRFSA8409-7TRL
Enrgtech Part No:
ET21606502
Warranty:
Manufacturer
$ 2.78 $ 2.78
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
523A
Maximum Drain Source Voltage Vds:
40V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
0.69mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
305nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
375W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
9.65 mm
Length:
10.54mm
Height:
4.83mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007726577.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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