Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23

Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23

Manufacturer:
Manufacturer Part No:
SN7002NH6327XTSA2
Enrgtech Part No:
ET21605559
Warranty:
Manufacturer
$ 0.04 $ 0.04
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
200mA
Maximum Drain Source Voltage Vds:
60V
Series:
499Ω
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
1.5nC
Maximum Power Dissipation Pd:
0.36W
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
60 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
IEC61249-2-21, AEC Q101
Automotive Standard:
No
pdf icon
A700000007366713.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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