Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-262

Manufacturer:
Manufacturer Part No:
IRF3205ZLPBF
Enrgtech Part No:
ET21605546
Warranty:
Manufacturer
$ 0.62 $ 0.62
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-262
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
6.5mΩ
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
380
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
170W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007367945.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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