Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IRF1404ZSTRLPBF
Enrgtech Part No:
ET21605543
Warranty:
Manufacturer
$ 1.01 $ 1.01
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-263
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
66200113722, 66200313722, 662100124015, 662162120030, 662362320030
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
150nC
Maximum Power Dissipation Pd:
200W
Forward Voltage Vf:
1.3V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007367721.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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