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ipt111n20nfdatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF
ipt111n20nfdatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF

Manufacturer:
Infineon
Manufacturer Part No:
IPT111N20NFDATMA1
Enrgtech Part No:
ET21605535
Warranty:
Manufacturer
$ 4.09 $ 4.09
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
96A
Maximum Drain Source Voltage Vds:
200V
Series:
OptiMOS 3
Package Type:
HSOF
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
11.1mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
0.8 nC @ 10 V
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
375W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Height:
2.4mm
Width:
10.58 mm
Length:
10.1mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007367913.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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