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siss30adn-t1-ge3 Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212
siss30adn-t1-ge3 Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212

Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212

Vishay SiSS30ADN Type N-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212

Manufacturer:
Vishay
Manufacturer Part No:
SiSS30ADN-T1-GE3
Enrgtech Part No:
ET21592005
Warranty:
Manufacturer
$ 0.60 $ 0.60
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
54.7A
Maximum Drain Source Voltage Vds:
80V
Package Type:
PowerPAK 1212
Series:
SiSS30ADN
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
7.4mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
57W
Typical Gate Charge Qg @ Vgs:
19.5nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Width:
3.4 mm
Standards/Approvals:
No
Height:
0.83mm
Length:
3.4mm
Automotive Standard:
No
pdf icon
A700000007241972.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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