Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3

Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3

Manufacturer:
Manufacturer Part No:
SIHP186N60EF-GE3
Enrgtech Part No:
ET19996193
Warranty:
Manufacturer
$ 2.07 $ 2.07
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
650V
Package Type:
TO-220
Series:
EF
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
193mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
32nC
Maximum Power Dissipation Pd:
156W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Width:
4.65 mm
Length:
10.52mm
Standards/Approvals:
No
Height:
14.4mm
Automotive Standard:
No
pdf icon
A700000006826786.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews