Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247

Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247

Manufacturer:
Manufacturer Part No:
SIHG22N60EF-GE3
Enrgtech Part No:
ET18211524
Warranty:
Manufacturer
$ 2.78 $ 2.78
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-247
Series:
SiHG22N60EF
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
182mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
179W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Height:
20.82mm
Length:
15.87mm
Width:
5.31 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8170a29a.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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