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sihg21n80ae-ge3 Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247
sihg21n80ae-ge3 Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

Manufacturer:
Vishay
Manufacturer Part No:
SIHG21N80AE-GE3
Enrgtech Part No:
ET18211523
Warranty:
Manufacturer
$ 2.87 $ 2.87
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
17.4A
Maximum Drain Source Voltage Vds:
800V
Series:
SiHG21N80AE
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
235mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
32W
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
15.87mm
Standards/Approvals:
No
Height:
20.82mm
Width:
5.31 mm
Automotive Standard:
No
pdf icon
0900766b8170a298.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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