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sihb22n60ef-ge3 Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263
sihb22n60ef-ge3 Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

Manufacturer:
Vishay
Manufacturer Part No:
SIHB22N60EF-GE3
Enrgtech Part No:
ET18211519
Warranty:
Manufacturer
$ 1.78 $ 1.78
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
600V
Series:
SiHB22N60EF
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
182mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
179W
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Maximum Operating Temperature:
150°C
Height:
4.57mm
Length:
10.41mm
Width:
9.65 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8170a290.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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