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si7997dp-t1-ge3 Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack
si7997dp-t1-ge3 Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

Manufacturer:
Vishay
Manufacturer Part No:
SI7997DP-T1-GE3
Enrgtech Part No:
ET16979329
Warranty:
Manufacturer
$ 1.36 $ 1.36
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
-60A
Maximum Drain Source Voltage Vds:
-30V
Package Type:
PowerPack
Series:
SI7997DP
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
5.5mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
F93
Maximum Power Dissipation Pd:
29W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.2V
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1.12mm
Length:
6.25mm
Width:
5.26 mm
Automotive Standard:
No
pdf icon
A700000006403601.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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