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sihb30n60e-ge3 Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHB30N60E-GE3
Enrgtech Part No:
ET16908717
Warranty:
Manufacturer
$ 6.89 $ 6.89
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
600V
Series:
E
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
125mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
85nC
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
250W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Length:
10.67mm
Height:
4.83mm
Width:
9.65 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8112ba3f.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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