Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IPB200N15N3GATMA1
Enrgtech Part No:
ET16837061
Warranty:
Manufacturer
$ 1.08 $ 1.08
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
50A
Maximum Drain Source Voltage Vds:
150V
Package Type:
TO-263
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
20mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
150W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
4.5 x 3.2 x 1.02mm
Height:
4.57mm
Length:
10.31mm
Automotive Standard:
No
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0900766b810908e8.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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