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tk100e06n1s1xs Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
tk100e06n1s1xs Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
tk100e06n1s1xs Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S

Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S

Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S

Manufacturer:
Toshiba
Manufacturer Part No:
TK100E06N1,S1X(S
Enrgtech Part No:
ET16828930
Warranty:
Manufacturer
$ 1.88 $ 1.88
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
263A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-220
Series:
U-MOSVIII-H
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.3mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
17.78 x 10 x 5.1mm
Typical Gate Charge Qg @ Vgs:
140nC
Forward Voltage Vf:
-1.2V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Length:
10.16mm
Width:
4.45 mm
Height:
15.1mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b81545b7f.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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