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bsp318sh6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1
bsp318sh6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1
bsp318sh6327xtsa1 Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1

Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1

Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223 BSP318SH6327XTSA1

Manufacturer:
Infineon
Manufacturer Part No:
BSP318SH6327XTSA1
Enrgtech Part No:
ET16828132
Warranty:
Manufacturer
$ 0.76 $ 0.76
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
2.6A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SOT-223
Series:
499Ω
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
150mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
Ladder
Maximum Power Dissipation Pd:
1.8W
Maximum Operating Temperature:
150°C
Width:
3.5 mm
Standards/Approvals:
No
Length:
6.5mm
Height:
1.6mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81074030.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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