Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

Manufacturer:
Manufacturer Part No:
SI7850DP-T1-E3
Enrgtech Part No:
ET16825609
Warranty:
Manufacturer
$ 2.22 $ 2.22
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.2A
Maximum Drain Source Voltage Vds:
60V
Series:
Si7850DP
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.8W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
18nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
4.9mm
Height:
1.04mm
Width:
5.89 mm
Standards/Approvals:
No
Automotive Standard:
No
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0900766b80ed1f13.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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