Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8

Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8

Manufacturer:
Manufacturer Part No:
SIR692DP-T1-RE3
Enrgtech Part No:
ET16824160
Warranty:
Manufacturer
$ 0.85 $ 0.85
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
24.2A
Maximum Drain Source Voltage Vds:
250V
Series:
SiR692DP
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
67mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.1V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
25.3nC
Maximum Power Dissipation Pd:
104W
Maximum Operating Temperature:
150°C
Height:
1.12mm
Length:
6.25mm
Standards/Approvals:
No
Width:
5.26 mm
Automotive Standard:
No
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0900766b815a741f.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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