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tk31e60xs1xs Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S
tk31e60xs1xs Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S
tk31e60xs1xs Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

Toshiba DTMOSIV Type N-Channel MOSFET, 30.8 A, 600 V Enhancement, 3-Pin TO-220 TK31E60X,S1X(S

Manufacturer:
Toshiba
Manufacturer Part No:
TK31E60X,S1X(S
Enrgtech Part No:
ET16797926
Warranty:
Manufacturer
$ 5.33 $ 5.33
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30.8A
Maximum Drain Source Voltage Vds:
600V
Series:
DTMOSIV
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
88mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
0.8 nC @ 10 V
Forward Voltage Vf:
-1.7V
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
230W
Maximum Operating Temperature:
150°C
Height:
15.1mm
Length:
10.16mm
Width:
4.45 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b81545ba7.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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