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spd30p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1
spd30p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1
spd30p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1

Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1

Manufacturer:
Infineon
Manufacturer Part No:
SPD30P06PGBTMA1
Enrgtech Part No:
ET16793872
Warranty:
Manufacturer
$ 1.07 $ 1.07
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
60V
Series:
499Ω
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
75mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
32nC
Maximum Power Dissipation Pd:
125W
Forward Voltage Vf:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=103991&DisplayLogo=False
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Length:
6.73mm
Height:
2.41mm
Standards/Approvals:
No
Distrelec Product Id:
304-44-484
Automotive Standard:
AEC-Q101
pdf icon
0900766b81472616.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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