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spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252
spd08p06pgbtma1 Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252

Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252

Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252

Manufacturer:
Infineon
Manufacturer Part No:
SPD08P06PGBTMA1
Enrgtech Part No:
ET16793867
Warranty:
Manufacturer
$ 0.32 $ 0.32
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
8.8A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-252
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
300mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.55V
Maximum Power Dissipation Pd:
42W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Width:
6.22 mm
Standards/Approvals:
No
Length:
6.5mm
Height:
2.3mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b81538255.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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