Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IRLR024NTRPBF
Enrgtech Part No:
ET16793726
Warranty:
Manufacturer
$ 0.30 $ 0.30
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
17A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
110mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
45W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
6.73mm
Width:
6.22 mm
Height:
2.39mm
Automotive Standard:
No
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0900766b8133abbf.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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