Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6

Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6

Manufacturer:
Manufacturer Part No:
IRLMS1503TRPBF
Enrgtech Part No:
ET16793725
Warranty:
Manufacturer
$ 0.14 $ 0.14
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.2A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
Micro6
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
200mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.7W
Typical Gate Charge Qg @ Vgs:
6.4nC
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000009586699.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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