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irlb8314pbf Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220
irlb8314pbf Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220
irlb8314pbf Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 171 A, 30 V Enhancement, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IRLB8314PBF
Enrgtech Part No:
ET16793710
Warranty:
Manufacturer
$ 0.65 $ 0.65
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
171A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
3.2mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Maximum Power Dissipation Pd:
125W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
3010
Maximum Operating Temperature:
175°C
Length:
10.67mm
Standards/Approvals:
No
Width:
EH Connector Housing
Height:
16.51mm
Automotive Standard:
No
pdf icon
0900766b81560d00.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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