Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRL7833PBF

Infineon HEXFET Type N-Channel MOSFET, 150 A, 30 V Enhancement, 3-Pin TO-220 IRL7833PBF

Manufacturer:
Manufacturer Part No:
IRL7833PBF
Enrgtech Part No:
ET16793708
Warranty:
Manufacturer
$ 2.05 $ 2.05
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
150A
Maximum Drain Source Voltage Vds:
30V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
140W
Maximum Gate Source Voltage Vgs:
±20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
32nC
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Length:
10.54mm
Standards/Approvals:
No
Width:
4.69 mm
Height:
8.77mm
Automotive Standard:
No
pdf icon
0900766b80dcb3b9.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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