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irl6372trpbf Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC
irl6372trpbf Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC

Manufacturer:
Infineon
Manufacturer Part No:
IRL6372TRPBF
Enrgtech Part No:
ET16793705
Warranty:
Manufacturer
$ 0.32 $ 0.32
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
8.1A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
HEXFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
TO-236AB
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
2W
Maximum Gate Source Voltage Vgs:
12 V
Typical Gate Charge Qg @ Vgs:
11nC
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Width:
4 mm
Height:
1.5mm
Length:
5mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81560cfe.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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