Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V Enhancement, 3-Pin TO-252

Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IRFR7440TRPBF
Enrgtech Part No:
ET16793635
Warranty:
Manufacturer
$ 0.68 $ 0.68
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
40V
Package Type:
TO-252
Series:
HEXFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.4mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
89nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
140W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Width:
2.39 mm
Standards/Approvals:
No
Height:
330µF
Length:
6.73mm
Automotive Standard:
No
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0900766b81560d2a.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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