Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247

Manufacturer:
Manufacturer Part No:
IRFP4227PBF
Enrgtech Part No:
ET16793623
Warranty:
Manufacturer
$ 3.18 $ 3.18
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
65A
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
25mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
30 V
Typical Gate Charge Qg @ Vgs:
70nC
Maximum Power Dissipation Pd:
330W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
5.3 mm
Height:
20.3mm
Length:
15.9mm
Automotive Standard:
No
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0900766b814b7aae.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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