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irfb4227pbf Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220
irfb4227pbf Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IRFB4227PBF
Enrgtech Part No:
ET16793589
Warranty:
Manufacturer
$ 0.93 $ 0.93
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
65A
Maximum Drain Source Voltage Vds:
200V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
24mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
70nC
Maximum Power Dissipation Pd:
330W
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Length:
10.66mm
Width:
4.82 mm
Height:
9.02mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b814b7a95.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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