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irf3205strlpbf Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF
irf3205strlpbf Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF
irf3205strlpbf Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF

Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205STRLPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF3205STRLPBF
Enrgtech Part No:
ET16793509
Warranty:
Manufacturer
$ 1.53 $ 1.53
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
8mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
146nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
200W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Length:
10.67mm
Height:
4.83mm
Width:
9.65 mm
Automotive Standard:
No
pdf icon
0900766b813418bc.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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