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ipw60r190p6fksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
ipw60r190p6fksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
ipw60r190p6fksa1 Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1

Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPW60R190P6FKSA1
Enrgtech Part No:
ET16793439
Warranty:
Manufacturer
$ 2.70 $ 2.70
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
650V
Series:
CoolMOS P6
Package Type:
TO-247
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
190mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.9V
Maximum Power Dissipation Pd:
Micro8
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
37nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
21.1mm
Length:
31.5 x 22 x 36.5mm
Width:
361mm
Automotive Standard:
No
pdf icon
0900766b814d6ca9.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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